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ANSYS inc 3d fdtd method
3d Fdtd Method, supplied by ANSYS inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/3d+fdtd+method/3d+fdtd+simulations/pmc12073108-64-9-14
Average 90 stars, based on 1 article reviews
3d fdtd method - by Bioz Stars, 2026-09
90/100 stars

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Article Title: Realization of nonvolatile polarization switch based on right-angle Sb2S3 embedded in 4H-SiC waveguide
Article Snippet: A nonvolatile polarization switch is proposed numerically assisted by right-angle Sb2S3 inlaid in a strip 4H-SiC waveguide.. The polarization of incident light can be engineered by the phase states of Sb2S3.. When the Sb2S3 is crystalline, a TE0-TM0 polarization conversion is achieved with insertion loss (IL) of 0.22 dB and polarization conversion efficiency (PCE) of 98.36 % at the wavelength of 1550 nm.

Article Title: Compact Nonvolatile Reconfigurable Mode Converter by Sb 2 S 3 Embedded in 4H-Silicon-Carbide-on-Insulator Platform.
Article Snippet: To calculate the device’s performance, we utilized a three-dimensional finite-difference time-domain (3D FDTD) method (Ansys Lumerical FDTD Solutions: 3D Electromagnetic Simulator) [34].

Article Title: Comparative SERS Activity of Homometallic and Bimetallic Core–Satellite Assemblies
Article Snippet: The numerical simulations were carried out using a three-dimensional finite-difference time-domain (3D FDTD, Ansys/Lumerical) method.

Article Title: Comparative SERS Activity of Homometallic and Bimetallic Core–Satellite Assemblies
Article Snippet: To acquire a better understanding of the near-field coupling arising from the nanoparticle assembly in CS clusters and the impact on the intensification of the Raman scattering from the SERS probe, numerical simulations of the distribution of the field enhancement intensity | E |/| E 0 | were carried out using a three-dimensional finite-difference time-domain (3D FDTD, Ansys/Lumerical) method [ ].

Article Title: Compact Nonvolatile Reconfigurable Mode Converter by Sb 2 S 3 Embedded in 4H-Silicon-Carbide-on-Insulator Platform
Article Snippet: To calculate the device’s performance, we utilized a three-dimensional finite-difference time-domain (3D FDTD) method (Ansys Lumerical FDTD Solutions: 3D Electromagnetic Simulator) [ ].



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